Share Email Print
cover

Proceedings Paper

Electron Beam Resist And Photoresist Behavior Of Polychrome Positive Resist
Author(s): J. N. Helbert; C. C. Walker; P. A. Seese; A. J. Gonzales
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A commercially available positive photoresist, Polychrome 129 SF, has been evaluated as both a positive electron beam resist and photoresist. The photoresist sensitivity, measured uniquely for a given developer based upon image dimensional control, is determined to be less than that of AZ 1350, under as nearly equivalent conditions as possible. The E-beam resist sensitivity is lower than that of PMMA reference, but the resist possesses good resolution. Near vertical edge wall profiles are obtained for 1-micrometer lines, but no undercutting is ever achieved regardless of electron charge density magnitude. The resist is capable of submicron line and space E-beam resolution, and 0.50-0.75 micrometer wide isolated line patterns can be routinely achieved.

Paper Details

Date Published: 28 July 1981
PDF: 5 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931890
Show Author Affiliations
J. N. Helbert, Motorola, Inc. (United States)
C. C. Walker, Motorola, Inc. (United States)
P. A. Seese, Motorola, Inc. (United States)
A. J. Gonzales, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)

© SPIE. Terms of Use
Back to Top