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Proceedings Paper

Simultaneous Transfer Of A Fine Pattern On Two Complementary Or Identical Replicas By X-Ray Lithography
Author(s): E. Rammos; V. Chalmeton; Y. Le Jean
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Paper Abstract

X-ray masks being fragile and expensive, we elaborate a duplication method giving replicas exactly iden-tical or complementary. Using the X-ray transparency of X-ray mask substrates, we make in a simultaneous exposure two replicas of a master-mask, their polarity being determined by that of the two used resists. A careful calculation ensure a correct exposure of the two resist layers by synchrotron radiation. Examples are given for 2 positive or 1 positive 1 negative resists. The polarity inversion of PMMA is also used.

Paper Details

Date Published: 28 July 1981
PDF: 6 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931876
Show Author Affiliations
E. Rammos, Laboratoires d'Electronique et de Physique Appliquee (France)
V. Chalmeton, Laboratoires d'Electronique et de Physique Appliquee (France)
Y. Le Jean, Laboratoires d'Electronique et de Physique Appliquee (France)

Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)

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