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Proceedings Paper

Comprehensive Test Sequence For The Electron Beam Exposure System
Author(s): Terrence E. Zavecz
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Paper Abstract

The electron beam exposure systems (EBES) currently used for photomask fabrication have been designed to operate to positional accuracies of ∓ 0.031 micron over an address range of 0.20 to 1.00 micron. The tuning, calibration and characterization of these systems has required an exacting and time consuming series of tests. A standard test array, MARKET A15, has been developed which enables full system characterization with only a thirty minute master generation time'and four hours analysis. System parameters such as linewidth control, resolution, registration, absolute accuracy and pattern scale accuracy can be determined from a single plate. The tests are composed of a series of exposures designed for analysis under an optical microscope along with a second group requiring reinsertion of the plate into EBES for "self-analysis". This array can be used as a basis for tuning, monitoring and multiple systems calibration of EBES or EBES-like rastor scan systems, A discussion of tests and techniques demonstrates how several EBES type systems in Western Electric and Bell Laboratories have been brought into mutual compatibility.

Paper Details

Date Published: 28 July 1981
PDF: 7 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931874
Show Author Affiliations
Terrence E. Zavecz, Western Electric Company (United States)

Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)

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