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Proceedings Paper

Submicron Optical Lithography?
Author(s): M. Roussel GCA/Burlington
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Paper Abstract

It was long thought that 1μ represented the limit of conventional optical lithography, and that the so-called "advanced lithographics", i.e. x-ray, E beam, would be required to do sub-micron work. It is now evident that conventional optics can be pushed below the 1μ barrier, but can sub-micron geometries be realized in a practical production environment? Or do they still belong in the realm of the laboratory? "Trade-offs" can be made in reduction ratio's, wavelength corrections, N.A.'s, field sizes, and etendue (optical efficiency), but can they make optical sub-micron lithography a viable production alternative? These questions are addressed and images from some of today's most advanced lenses are examined.

Paper Details

Date Published: 28 July 1981
PDF: 8 pages
Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); doi: 10.1117/12.931867
Show Author Affiliations
M. Roussel GCA/Burlington


Published in SPIE Proceedings Vol. 0275:
Semiconductor Microlithography VI
James W. Dey, Editor(s)

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