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Proceedings Paper

Characteristics Of Polarized Light Reflection From The Si02-Si Film-Substrate System
Author(s): R. M. A. Azzam; A.-R. M. Zaghloul
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Paper Abstract

The change of polarization of light upon reflection from an optically isotropic film-substrate system is determined by the ratio of complex amplitude p and s reflection coeffi-cients, p = Rp/Rs. If the incident light is linearly polarized at 45 degree azimuth from the plane of incidene, p assumes the dual role of representing the elliptic vibration of the reflected light. We examine p as a function of angle of incidence φ and film thickness d for the SiO2-Si system at wavelength λ = 6328 Å and present contours of φ = constant and d = constant in the complex p plane. Conversely, we also determine contours in the φ plane that represent ψ = arctan Ipl=constant and Δ=arg p=constant. Of particular interest are images in the φd plane of the real and imaginary axes (Δ=0, π and Δ=+π2) and of the unit circle(ψ=π4) of the complex p plane.

Paper Details

Date Published: 30 April 1981
PDF: 7 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931713
Show Author Affiliations
R. M. A. Azzam, University of New Orleans (United States)
A.-R. M. Zaghloul, Cairo University (Egypt)


Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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