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Proceedings Paper

Optical Detection And Minimization Of Surface Overlayers On Semiconductors Using Spectroscopic Ellipsometry
Author(s): D. E. Aspnes; A. A. Studna
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Paper Abstract

Spectroscopic ellipsometry can be used to assess in real time the effectiveness of etching and cleaning methods in reducing the amount of unwanted interface material (oxides, contamination, pits, damage, etc.) at the surface of a semiconductor. However, we show that an unambiguous response denoting removal of interface material occurs only in certain wavelength ranges. We have applied this technique to determine chemical procedures that yield the sharpest dielectric discontinuities (smoothest and/or cleanest surfaces) for Si, Ge, and some III-V compound semiconductors.

Paper Details

Date Published: 30 April 1981
PDF: 7 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931711
Show Author Affiliations
D. E. Aspnes, Bell Laboratories (United States)
A. A. Studna, Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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