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Proceedings Paper

Infrared Reflectance Spectra Of Thin-Epitaxial Silicon Layers
Author(s): Benjamin Senitzky; S. P. Weeks
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Paper Abstract

IR reflectance spectra of thin (>0.5μm) epitaxial layers on substrates containing n-type buried layers are investigated in the 5μm to 50μm wavelength range. From measurements on uniformly doped wafers it is found that the Drude model with a constant relaxation time should be used to compute the optical constants of the buried layers. The reflectance spectra can then be used to determine epitaxial layer thickness, peak concentration of the buried layer and the thickness of the buried layer. For our process conditions the optically measured epitaxial thick-ness and peak concentration are in close agreement to measurements performed with a secon-dary ion microprobe.

Paper Details

Date Published: 30 April 1981
PDF: 5 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931710
Show Author Affiliations
Benjamin Senitzky, Polytechnic Institute of New York (United States)
S. P. Weeks, Bell Telephone Laboratories (United States)


Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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