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Proceedings Paper

Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers
Author(s): N. Bottka; Marian E. Hills
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Paper Abstract

Internally reflected electroabsorption, a modulation spectroscopy tool, can be used as a nondestructive optical method to determine the gap energies and, hence, the composition of the epitaxial layers in heterostructures. At the same time, the presence of built-in inter-face potentials can also be determined. The method was used to study n-n GaAs1-xSbx hetero-structures grown on n+ GaAs substrates using a simple Schottky barrier contact.

Paper Details

Date Published: 30 April 1981
PDF: 7 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931701
Show Author Affiliations
N. Bottka, Naval Weapons Center (United States)
Marian E. Hills, Naval Weapons Center (United States)

Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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