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Proceedings Paper

Laser-Induced Crystal Growth Measurements By Time-Resolved Optical Reflectivity
Author(s): G. L. Olson; S. A. Kokorowski; J. A. Roth; R. S. Turley; L. D. Hess
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Paper Abstract

A recently developed optical reflectivity technique for monitoring laser-induced solid phase epitaxial crystal growth in real time is described, and examples which illustrate its use in studies of solid-state kinetics in ion-implanted and UHV-deposited films are presented. Data which show the dependence of epitaxial growth rate on the position of the crystal/amorphous interface, growth rate as a function of temperature, and deviations from ideal epitaxial growth due to competing crystallization processes are presented and discussed. The laser technique represents a significant advance in experimental capabilities for measuring details of solid phase epitaxy kinetics; crystallization rates can be accurately measured at higher temperatures, and with greater temporal and spatial resolution than had been previously possible.

Paper Details

Date Published: 30 April 1981
PDF: 8 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931698
Show Author Affiliations
G. L. Olson, Hughes Research Laboratories (United States)
S. A. Kokorowski, Hughes Research Laboratories (United States)
J. A. Roth, Hughes Research Laboratories (United States)
R. S. Turley, Hughes Research Laboratories (United States)
L. D. Hess, Hughes Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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