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Proceedings Paper

Infrared Localized Vibrational Mode Spectroscopy Of Carbon-Implanted GaAs
Author(s): W. M. Theis; C. W. Litton; K. K. Bajaj
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Paper Abstract

The localized vibrational mode of 12C implanted into GaAs at 6 MeV and a fluence of 5xlO16 /cm2 is studied as a function of annealing to 900°C. The feature sharpens and decreases in strength until 500°C and saturates thereafter. Electrical measurements indicate p-type behavior of the implant at 900°C, which is usual for implants of this nature.

Paper Details

Date Published: 30 April 1981
PDF: 4 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931695
Show Author Affiliations
W. M. Theis, AFWAL Avionics Laboratory (United States)
C. W. Litton, AFWAL Avionics Laboratory (United States)
K. K. Bajaj, Universal Energy Systems, Incorporated (United States)

Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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