Share Email Print
cover

Proceedings Paper

Material Characterization By Raman Scattering
Author(s): Raphael Tsu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Raman scattering has been used as material characterizations such as crystal orientation, imperfections, structural and compositional disorders, carrier concentration, and even mobility. In particular, specific applications for the study of alloy composition in GaAlAs and GaA1P; for GaAlAs-GaAs superlattice; and for laser annealing of ion-implanted amorphous Si and GaAs; will be presented in detail. Two examples on the determination of carrier concentrations; for polar crystals such as GaAs; and for non-polar crystals such as Si, are also presented.

Paper Details

Date Published: 30 April 1981
PDF: 6 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931690
Show Author Affiliations
Raphael Tsu, Energy Conversion Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

© SPIE. Terms of Use
Back to Top