Share Email Print

Proceedings Paper

Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors
Author(s): G. P. Schwartz
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The application of surface reflection Raman scattering as an optical probe for monitor-ing the presence and growth of elemental deposits of group V (P,As,Sb) metalloids in native oxide films on III-V compound semiconductors is discussed. Selective data from the litera-ture concerning arsenic inclusions in native oxides on GaAs and AlxGal_xAs and red phosphor-us deposits in thermally oxidized films on InP are used to illustrate the technique.

Paper Details

Date Published: 30 April 1981
PDF: 6 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931689
Show Author Affiliations
G. P. Schwartz, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

© SPIE. Terms of Use
Back to Top