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Proceedings Paper

Raman Scattering Detection Of Elemental Group V Deposits In Native Oxides On III-V Compound Semiconductors
Author(s): G. P. Schwartz
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Paper Abstract

The application of surface reflection Raman scattering as an optical probe for monitor-ing the presence and growth of elemental deposits of group V (P,As,Sb) metalloids in native oxide films on III-V compound semiconductors is discussed. Selective data from the litera-ture concerning arsenic inclusions in native oxides on GaAs and AlxGal_xAs and red phosphor-us deposits in thermally oxidized films on InP are used to illustrate the technique.

Paper Details

Date Published: 30 April 1981
PDF: 6 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931689
Show Author Affiliations
G. P. Schwartz, Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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