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Proceedings Paper

Lifetime Scanning Measurements On Hg0.7Cd0.3Te By Population Modulation
Author(s): J. A. Mroczkowski; J. F. Shanley; D. L. Polla; P. J. Kannam
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Paper Abstract

A contactless optical technique has been developed for the measurement of excess photogenerated carrier lifetime in Hg0.7Cd0.3Te in a raster scan mode. The technique consists of measuring the steady state mod-ulation AI in the transmitted intensity I of a probe beam (-11,a) < Eg) due to a modulated pump beam (Kw < Eg) incident on the same surface. The fractional change in the probe beam transmission AI/I is related to the excess carrier lifetime. Lifetimes in the 20 ns to 20 us range have been measured using pump photon fluxes on the order of 1018 photons/cm2-s.

Paper Details

Date Published: 30 April 1981
PDF: 4 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931686
Show Author Affiliations
J. A. Mroczkowski, Honeywell (United States)
J. F. Shanley, Honeywell (United States)
D. L. Polla, Honeywell (United States)
P. J. Kannam, Honeywell (United States)

Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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