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Proceedings Paper

Electro-Optical Characterization Of Semiconductors
Author(s): W. Y. Lum; A. K. Nedoluha; H. H. Wieder
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Paper Abstract

The effect of semiconductor surfaces and interfaces on the electro-optical response of semiconductor structures has been investigated experimentally and theoretically. The dependence of photoconductance (PC), photoelectronagnetic (PEM) current, and photovoltage (PV), on the gate bias voltage in n-Si MOSFET-type structures has been calculated and com-pared with experiment. The characteristic feature is a minimum of the PEM current and of PC in depletion. Quantitative discrepancies occurring in depletion and inversion are tentatively explained by nonuniformities in the surface potential and by leakage current. The results, obtained for uniform illumination, are compared with the electro-optical response to point illumination and with measurements on unpassivated silicon samples. In bicrystals of GaAs and of InP, the PEM and PC response to a laser beam scanned across the grain boundary suggests that those grain boundaries are interior surfaces with properties similar to outer surfaces of the corresponding materials.

Paper Details

Date Published: 30 April 1981
PDF: 7 pages
Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); doi: 10.1117/12.931685
Show Author Affiliations
W. Y. Lum, Naval Ocean Systems Center (United States)
A. K. Nedoluha, Naval Ocean Systems Center (United States)
H. H. Wieder, Naval Ocean Systems Center (United States)


Published in SPIE Proceedings Vol. 0276:
Optical Characterization Techniques for Semiconductor Technology
David E. Aspnes; Roy F. Potter; Samuel S. So, Editor(s)

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