Share Email Print
cover

Proceedings Paper

Characterization of GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer as 1.3 μm photo sensors
Author(s): F. Hartmann; F. Langer; D. Bisping; A. Musterer; S. Höfling; M. Kamp; A. Forchel; L. Worschech
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

AlGaAs/GaAs/AlGaAs double-barrier resonant-tunneling diodes (RTD) were grown by molecular beam epitaxy with a nearby, lattice-matched GaInNAs absorption layer. RTD mesas with ring contacts and an aperture for optical excitation of charge carriers were fabricated on the epitaxial layers. Electrical and optical properties of the RTDs were investigated for different thicknesses of a thin GaAs spacer layer incorporated between the tunnel AlGaAs barrier adjacent to the GaInNAs absorption layer. Illumination of the RTDs with laser light of 1.3 µm wavelength leads to a pronounced photo-effect with a sensitivity of around 1000 A/W.

Paper Details

Date Published: 24 October 2012
PDF: 9 pages
Proc. SPIE 8511, Infrared Remote Sensing and Instrumentation XX, 85110G (24 October 2012); doi: 10.1117/12.931118
Show Author Affiliations
F. Hartmann, Univ. Würzburg (Germany)
F. Langer, Univ. Würzburg (Germany)
D. Bisping, Univ. Würzburg (Germany)
A. Musterer, Univ. of British Columbia (Canada)
S. Höfling, Univ. Würzburg (Germany)
M. Kamp, Univ. Würzburg (Germany)
A. Forchel, Univ. Würzburg (Germany)
L. Worschech, Univ. Würzburg (Germany)


Published in SPIE Proceedings Vol. 8511:
Infrared Remote Sensing and Instrumentation XX
Marija Strojnik; Gonzalo Paez, Editor(s)

© SPIE. Terms of Use
Back to Top