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Proceedings Paper

Temperature-dependent minority carrier lifetimes of InAs/InAs[sub]1-x[/sub]Sb[sub]x[/sub] type-II superlattices
Author(s): E. H. Steenbergen; B. C. Connelly; G. D. Metcalfe; H. Shen; M. Wraback; D. Lubyshev; Y. Qiu; J. M. Fastenau; A. W. K. Liu; S. Elhamri; O. O. Cellek; Y.-H. Zhang
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Paper Abstract

Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both non-radiative and radiative recombination mechanisms apparent, with comparable contributions from both near 77 K, and radiative recombination dominating at low temperatures. Samples with short periods and large wave function overlaps have radiative recombination dominating from 10 K until ~200 K. The improved lifetimes observed will enable long minority carrier lifetime superlattices to be designed for high quantum efficiency, low dark current infrared detectors.

Paper Details

Date Published: 15 October 2012
PDF: 8 pages
Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120L (15 October 2012); doi: 10.1117/12.930949
Show Author Affiliations
E. H. Steenbergen, Air Force Research Lab. (United States)
Arizona State Univ. (United States)
B. C. Connelly, U.S. Army Research Lab. (United States)
G. D. Metcalfe, U.S. Army Research Lab. (United States)
H. Shen, U.S. Army Research Lab. (United States)
M. Wraback, U.S. Army Research Lab. (United States)
D. Lubyshev, IQE Inc. (United States)
Y. Qiu, IQE Inc. (United States)
J. M. Fastenau, IQE Inc. (United States)
A. W. K. Liu, IQE Inc. (United States)
S. Elhamri, Univ. of Dayton (United States)
O. O. Cellek, Arizona State Univ. (United States)
Y.-H. Zhang, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 8512:
Infrared Sensors, Devices, and Applications II
Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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