Share Email Print

Proceedings Paper

Spin dynamics in two-dimensional electron and hole systems revealed by resonant spin amplification
Author(s): T. Korn; M. Griesbeck; M. Kugler; S. Furthmeier; C. Gradl; M. Hirmer; D. Schuh; W. Wegscheider; K. Korzekwa; P. Machnikowski; T. Kuhn; M. M. Glazov; E. Ya. Sherman; C. Schüller
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Understanding and controlling the spin dynamics in semiconductor heterostructures is a key requirement for the design of future spintronics devices. In GaAs-based heterostructures, electrons and holes have very different spin dynamics. Some control over the spin-orbit fields, which drive the electron spin dynamics, is possible by choosing the crystallographic growth axis. Here, (110)-grown structures are interesting, as the Dresselhaus spinorbit fields are oriented along the growth axis and therefore, the typically dominant Dyakonov-Perel mechanism is suppressed for spins oriented along this axis, leading to long spin depasing times. By contrast, hole spin dephasing is typically very rapid due to the strong spin-orbit interaction of the p-like valence band states. For localized holes, however, most spin dephasing mechanisms are suppressed, and long spin dephasing times may be observed. Here, we present a study of electron and hole spin dynamics in GaAs-AlGaAs-based quantum wells. We apply the resonant spin amplification (RSA) technique, which allows us to extract all relevant spin dynamics parameters, such as g factors and dephasing times with high accuracy. A comparison of the measured RSA traces with the developed theory reveals the anisotropy of the spin dephasing in the (110)-grown two-dimensional electron systems, as well as the complex interplay between electron and hole spin and carrier dynamics in the two-dimensional hole systems.

Paper Details

Date Published: 9 October 2012
PDF: 12 pages
Proc. SPIE 8461, Spintronics V, 84610O (9 October 2012); doi: 10.1117/12.930840
Show Author Affiliations
T. Korn, Univ. Regensburg (Germany)
M. Griesbeck, Univ. Regensburg (Germany)
M. Kugler, Univ. Regensburg (Germany)
S. Furthmeier, Univ. Regensburg (Germany)
C. Gradl, Univ. Regensburg (Germany)
M. Hirmer, Univ. Regensburg (Germany)
D. Schuh, Univ. Regensburg (Germany)
W. Wegscheider, ETH Zurich (Switzerland)
K. Korzekwa, Wroclaw Univ. of Technology (Poland)
P. Machnikowski, Wroclaw Univ. of Technology (Poland)
T. Kuhn, Westfälische Wilhelms-Univ. (Germany)
M. M. Glazov, Ioffe Physico-Technical Institute (Russian Federation)
E. Ya. Sherman, The Univ. of the Basque Country (Spain)
IKERBASQUE Basque Foundation for Science (Spain)
C. Schüller, Univ. Regensburg (Germany)

Published in SPIE Proceedings Vol. 8461:
Spintronics V
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top