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Proceedings Paper

Anatomy of phonon-induced spin relaxation processes in silicon
Author(s): Yang Song; Hanan Dery
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Paper Abstract

We present a methodology to systematically and analytically treat phonon-induced spin relaxation of conduction electron in silicon. All leading order contribution from all phonon modes and scattering processes are considered and the results for spin-flip matrix elements and spin lifetime are summarized. We show the explicit dependence of matrix elements on the electron wavevectors, spin orientation and phonon polarization. These results are shown to be powerful especially under symmetry-breaking conditions when an averaging rough evaluation of the matrix elements is not sufficient. Corrections due to the special two-band degeneracy in the X point (near the conduction valley minima) are also discussed. Numerical calculation are used to confirm the analytical results.

Paper Details

Date Published: 9 October 2012
PDF: 16 pages
Proc. SPIE 8461, Spintronics V, 84611B (9 October 2012); doi: 10.1117/12.930798
Show Author Affiliations
Yang Song, Univ. of Rochester (United States)
Hanan Dery, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 8461:
Spintronics V
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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