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Proceedings Paper

Antimony-doped silicon blocked impurity band (BIB) arrays for low flux applications
Author(s): V. Khalap; H. Hogue
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Paper Abstract

DRS is the inventor and a leading developer of Blocked Impurity Band detector technology for ground, airborne and space-based observing applications and the sole developer of antimony doped silicon (Si:Sb) blocked impurity band (BIB) FPAs. Arsenic doped silicon (Si:As) and Si:Sb arrays in 1282 pixel formats were developed by DRS for use on the Spitzer Space telescope. In the subsequent years these arrays were extended in both format and capability. 10242 pixel format, low flux Si:As arrays were developed for the NASA WISE mission, and Si:As and Si:Sb arrays were developed for higher flux applications such as JPL’s MegaMIR camera and Cornell’s FORCAST instrument for SOFIA, in both 2562 and 10242 pixel array formats. Si:Sb arrays have advanced to offer similar responsivity, response uniformity, high operability and low dark currents long associated with Si:As BIB arrays but with high quantum efficiency that extends to 40 μm, compared to only 28 μm for Si:As. Recently, Si:Sb detector material has been further developed for low flux astronomy applications. Specifically, Si:Sb material has been grown to satisfy exceptionally low dark current requirements (such as < 0.5 e-/s/pixel at 5 K) for large format focal plane arrays for future infrared telescopes. This paper will focus on the characterization of this low flux Si:Sb detector material

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120O (15 October 2012); doi: 10.1117/12.930769
Show Author Affiliations
V. Khalap, DRS Sensors & Targeting Systems, Inc. (United States)
H. Hogue, DRS Sensors & Targeting Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 8512:
Infrared Sensors, Devices, and Applications II
Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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