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Proceedings Paper

Contact metal effects in indium phosphide nanowire transistor
Author(s): Jin-woo Han; Andrew J. Lohn; Meyya Meyyappan; Nobuhiko P. Kobayashi
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Paper Abstract

We have investigated electrical properties of indium phosphide nanowire field effect transistors with four different types of metal electrodes (Cr, Ti, Au, and Pt). The nanowires with a width of 50 nm were undoped and grown by metal-organic chemical vapor deposition. Among the four types of metal electrodes, Cr/InP and Ti/InP showed ambipolar conduction, while Pt/InP and Au/InP exhibited p-type conduction. Extracted Schottky barrier heights suggest that barrier heights do not vary linearly with respect to the metal workfunction. Although the Pt/InP features the smallest barrier height, the Au/InP showed the highest drain current at a given gate bias.

Paper Details

Date Published: 11 October 2012
PDF: 6 pages
Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670Z (11 October 2012); doi: 10.1117/12.930530
Show Author Affiliations
Jin-woo Han, NASA Ames Research Ctr. (United States)
Andrew J. Lohn, Univ. of California, Santa Cruz (United States)
Nanostructured Energy Conversion Technology and Research (United States)
Meyya Meyyappan, NASA Ames Research Ctr. (United States)
Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)
Nanostructured Energy Conversion Technology and Research (United States)


Published in SPIE Proceedings Vol. 8467:
Nanoepitaxy: Materials and Devices IV
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam, Editor(s)

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