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Proceedings Paper

Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces
Author(s): Andreas A. Brand; Annerose Knorz; Ralf Zeidler; Jan-Frederik Nekarda; Ralf Preu
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Paper Abstract

This work discusses the impact of laser annealing on a picosecond laser ablation process of anti-reflection layers on damage etched and random pyramid textured silicon wafers. The laser ablation is realized using picosecond pulsed laser radiation which facilitates a continuously ablated passivation layer but induces a significant reduction in charge carrier lifetime. It is demonstrated that the application of a nanosecond pulsed laser annealing step can improve the electrical properties of the picosecond laser treated area.

Paper Details

Date Published: 12 October 2012
PDF: 10 pages
Proc. SPIE 8473, Laser Material Processing for Solar Energy, 84730D (12 October 2012); doi: 10.1117/12.930491
Show Author Affiliations
Andreas A. Brand, Fraunhofer-Institut für Solare Energiesysteme (Germany)
Annerose Knorz, Fraunhofer-Institut für Solare Energiesysteme (Germany)
Ralf Zeidler, Fraunhofer-Institut für Solare Energiesysteme (Germany)
Jan-Frederik Nekarda, Fraunhofer-Institut für Solare Energiesysteme (Germany)
Ralf Preu, Fraunhofer-Institut für Solare Energiesysteme (Germany)


Published in SPIE Proceedings Vol. 8473:
Laser Material Processing for Solar Energy
Edward W. Reutzel, Editor(s)

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