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Proceedings Paper

First observation of a plasmon-mediated tunable photoresponse in a grating-gated InGaAs/InP HEMT for millimeter-wave detection
Author(s): Nima Nader Esfahani; Robert E. Peale; Walter R. Buchwald; Joshua R. Hendrickson; Justin W. Cleary
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Paper Abstract

A tunable resonant photoresponse to millimeter-waves is demonstrated in a grating-gated high electron mobility transistor (HEMT) formed by an InGaAs/InP heterostructure. The gate consists of a metal grating with 9 μm period, which was designed to couple mm-radiation to plasmons in the two-dimensional electron gas (2DEG) of the HEMT. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. These devices have potential as chip-scale frequency-agile mm-wave detectors, which may be scaled to THz frequencies.

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120Y (15 October 2012); doi: 10.1117/12.930359
Show Author Affiliations
Nima Nader Esfahani, Univ. of Central Florida (United States)
Solid State Scientific Corp. (United States)
Air Force Research Lab. (United States)
Robert E. Peale, Univ. of Central Florida (United States)
Walter R. Buchwald, Solid State Scientific Corp. (United States)
Joshua R. Hendrickson, Air Force Research Lab. (United States)
Justin W. Cleary, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 8512:
Infrared Sensors, Devices, and Applications II
Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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