Share Email Print
cover

Proceedings Paper

Process development of GaN light emitting diodes with imbedded contacts
Author(s): Ray-Hua Horn; Yu-Wei Kuo
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A wings type imbedded electrode was introduced into the lateral light emitting diodes (WTIE-LEDs) to improve the light shading effect from the metal electrode of LED. The wing type imbedded contact structure was expected to eliminate the light shading of electrode and bonding wire, and further increased the light extraction and light output power. At 100 mA injection current, the WTIE-LED structure enhanced the output power of 41.6% as compared with that of conventional sapphire-based LEDs (CSB-LEDs) Moreover, the output power of the packaged WTIR-LED and CSB-LED is 70 and 88.94 mW, respectively, at the same injection condition. A 27% enhancement of light output power was achieved. Therefore, using the imbedded contact to reduce light shading would be a promising prospective for vertical LEDs to achieve high output power.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 848406 (15 October 2012); doi: 10.1117/12.930252
Show Author Affiliations
Ray-Hua Horn, National Chung Hsing Univ. (Taiwan)
National Cheng Kung Univ. (Taiwan)
Yu-Wei Kuo, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8484:
Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang; Ian T. Ferguson, Editor(s)

© SPIE. Terms of Use
Back to Top