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Proceedings Paper

Testing of CMOS devices in NIF's harsh neutron environment
Author(s): Alan T. Teruya; Perry M. Bell; Scott Burns; Chris Hagmann; James D. Moody; Mike Richardson
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Paper Abstract

Vendor supplied CMOS sensors were exposed to 14 MeV neutrons on yield shots in NIF and examined for damage. The sensors were exposed to multiple shots with a maximum fluence on one of the sensors of 4.3E11 n/cm2. The results of post-shot testing will be presented. LLNL is investigating the suitability of CMOS imaging sensors for use in the camera of the ARIANE diagnostic which will mitigate the effects of the NIF neutron environment by dumping photoelectrons during the neutron pulse and then recording an image stored on a long persistence phosphor.

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8505, Target Diagnostics Physics and Engineering for Inertial Confinement Fusion, 85050C (15 October 2012); doi: 10.1117/12.930132
Show Author Affiliations
Alan T. Teruya, Lawrence Livermore National Lab. (United States)
Perry M. Bell, Lawrence Livermore National Lab. (United States)
Scott Burns, Lawrence Livermore National Lab. (United States)
Chris Hagmann, Lawrence Livermore National Lab. (United States)
James D. Moody, Lawrence Livermore National Lab. (United States)
Mike Richardson, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 8505:
Target Diagnostics Physics and Engineering for Inertial Confinement Fusion
Perry Bell; Gary P. Grim, Editor(s)

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