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Proceedings Paper

Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials
Author(s): Mao-Hua Du; Koushik Biswas; David J. Singh
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Paper Abstract

In this paper, we report theoretical studies of native defects and dopants in a number of room-temperature semiconductor radiation detection materials, i.e., CdTe, TlBr, and Tl6SeI4. We address several important questions, such as what causes high resistivity in these materials, what explains good μτ product (carrier mobility-lifetime product) in soft-lattice ionic compounds that have high defect density, and how to obtain high resistivity and low carrier trapping simultaneously. Our main results are: (1) shallow donors rather than deep ones are responsible for high resistivity in high-quality detectorgrade CdTe; (2) large dielectric screening and the lack of deep levels from low-energy native defects may contribute to the good μτ products for both electrons and holes in TlBr; (3) the polarization phenomenon in Tl6SeI4 is expected to be much reduced compared to that in TlBr.

Paper Details

Date Published: 24 October 2012
PDF: 11 pages
Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 85070M (24 October 2012); doi: 10.1117/12.930072
Show Author Affiliations
Mao-Hua Du, Oak Ridge National Lab. (United States)
Koushik Biswas, Oak Ridge National Lab. (United States)
David J. Singh, Oak Ridge National Lab. (United States)


Published in SPIE Proceedings Vol. 8507:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Ralph B. James; Arnold Burger; Larry A. Franks; Michael Fiederle, Editor(s)

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