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Proceedings Paper

Transient analysis of electrolyte-gated organic field-effect transistors
Author(s): Deyu Tu; Loïg Kergoat; Xavier Crispin; Magnus Berggren; Robert Forchheimer
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Paper Abstract

A terminal charge and capacitance model is developed for transient behavior simulation of electrolyte-gated organic field effect transistors (EGOFETs). Based on the Ward-Dutton partition scheme, the charge and capacitance model is derived from our drain current model reported previously. The transient drain current is expressed as the sum of the initial drain current and the charging current, which is written as the product of the partial differential of the terminal charges with respect to the terminal voltages and the differential of the terminal voltages upon time. The validity for this model is verified by experimental measurements.

Paper Details

Date Published: 11 October 2012
PDF: 9 pages
Proc. SPIE 8478, Organic Field-Effect Transistors XI, 84780L (11 October 2012); doi: 10.1117/12.929886
Show Author Affiliations
Deyu Tu, Linköping Univ. (Sweden)
Loïg Kergoat, Linköping Univ. (Sweden)
Xavier Crispin, Linköping Univ. (Sweden)
Magnus Berggren, Linköping Univ. (Sweden)
Robert Forchheimer, Linköping Univ. (Sweden)


Published in SPIE Proceedings Vol. 8478:
Organic Field-Effect Transistors XI
Zhenan Bao; Iain McCulloch, Editor(s)

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