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Proceedings Paper

Next generation CMOS SSPMs for scintillation detection applications
Author(s): Xiao Jie Chen; Erik B. Johnson; Christopher J. Stapels; Chad Whitney; James F. Christian
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Paper Abstract

Early CMOS SSPM pixel designs utilize a highly doped layer near the surface as a component for the Geiger junction, which limits the collection of charge from the surface and the UV response of the high gain solid state photodetector. To address these limitations, we are developing a new generation of CMOS SSPMs using pixel elements with a buried layer as a component of the Geiger junction in a process with smaller feature sizes. The new SSPM, an array of newly designed Geiger photodiode elements, is designed and fabricated to provide improvements in blue light response and dark noise performance. This work compares the performance of the early and new CMOS SSPM designs. Results showed ~2-4× improvement of detection efficiency in the blue/shallow UV region (350nm to 450nm), and a 10× reduction in detector dark count rate. Due to higher operating bias, the after pulse multiplier is no larger than a factor of 1.5 larger than the previous design. Inter-pixel cross-talk is similar to previous SSPM designs at comparable Geiger probabilities.

Paper Details

Date Published: 24 October 2012
PDF: 12 pages
Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 850704 (24 October 2012); doi: 10.1117/12.929841
Show Author Affiliations
Xiao Jie Chen, Radiation Monitoring Devices Inc. (United States)
Erik B. Johnson, Radiation Monitoring Devices Inc. (United States)
Christopher J. Stapels, Radiation Monitoring Devices Inc. (United States)
Chad Whitney, Radiation Monitoring Devices Inc. (United States)
James F. Christian, Radiation Monitoring Devices Inc. (United States)


Published in SPIE Proceedings Vol. 8507:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Ralph B. James; Arnold Burger; Larry A. Franks; Michael Fiederle, Editor(s)

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