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Proceedings Paper

Fabrication of p-ZnO thin films by ZrN codoping
Author(s): S. Gowrishankar; L. Balakrishnan; N. Gopalakrishnan
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Paper Abstract

An attempt has been made to fabricate p-ZnO by direct doping (codoping) of ZrN into ZnO thin films. The ZrN codoped ZnO (ZNZO) thin films of different concentrations (ZrN= 1, 2 and 4 mol %) have been grown on sapphire substrates by RF magnetron sputtering. The grown films have been characterized by X-ray diffraction (XRD), Hall effect measurement, photoluminescence (PL) and time-of-flight secondary-ion mass spectroscopy (ToF SIMS) analysis. XRD studies reveal that all the films are preferentially oriented along (002) plane. The Hall measurement showed that 1 and 2 mol% ZNZO films exhibit n-type conductivity due to the insufficient amount of nitrogen incorporation. However, 4 mol% ZNZO film showed p-type conduction as the sufficient amount of nitrogen has been incorporated into the film. The resistivity and hole concentration of the fabricated p-ZnO have been found as (1.92×10-1 Ωcm) and (2.76 x 1018 cm- 3) respectively. The red shift in near-band-edge emission observed from PL evidenced the formation of p-conductivity in ZNZO films. The obtained p-conductivity has been well supported by XRD and PL studies. The presence of dopant in the film has been confirmed by ToF-SIMS depth profile analysis.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 84840W (15 October 2012); doi: 10.1117/12.929754
Show Author Affiliations
S. Gowrishankar, National Institute of Technology (India)
L. Balakrishnan, National Institute of Technology (India)
N. Gopalakrishnan, National Institute of Technology (India)


Published in SPIE Proceedings Vol. 8484:
Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang; Ian T. Ferguson, Editor(s)

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