Share Email Print
cover

Proceedings Paper

Investigation of the (Cu,Ga)InSe2 thin film with different pairs of CuGa/In sputtered layers
Author(s): Yu-Ting Hsu; Kai-Feng Huang; Shang-I Tsai; Wen-Hou Lan; Ming Yueh; Jia-Ching Lin; Kuo-Jen Chang; Wen-Jen Lin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Thin film samples of (Cu,Ga)InSe2 (CIGS) were prepared by DC magnetron sputtering and the selenisation process onto soda lime glass substrates. All samples had the same deposition conditions, and the optimal sputtering thickness of samples with one CuGa/In pair and two CuGa/In pairs are also the same. After sample deposition, X-ray diffraction (XRD), scanning electron microscope (SEM) and Hall effect measurements were used to characterize the properties of these samples. From XRD measurement results, excepting an extra small CuSe peak existing in the samples with two CuGa/In pairs, the XRD peaks of all samples are perfectly matched with the phase diagram of CuGa0.3In0.7Se2 material. It was also found that the grain sizes of the samples with one CuGa/In pair are larger than those with two CuGa/In pairs from SEM images. All these observations on samples with two CuGa/In pairs can be attributed to the fact that the less In incorporation in CIGS films, which it has been proven that the sample with low In-to-CuGa ratio has stronger CuSe peak from XRD result. Furthermore, the p-type carrier characteristics can be observed for all samples from Hall measurement results. The carrier mobility and concentration of the samples with one CuGa/In pair can be achieved as high as 15.28 cm2/Vs and as low as 1.50×1016 cm-3, respectively, while the carrier mobility and concentration of the ones with two CuGa/In pairs can be achieved as 6.4 cm2/Vs and 6.27×1017 cm-3, respectively. The results of superior electrical properties of samples with one CuGa/In pair agree well with the observations form XRD and SEM results. In the final, the optimal value of In-to-CuGa ratio during CuGa/In layers deposition in this study is 0.625.

Paper Details

Date Published: 10 October 2012
PDF: 7 pages
Proc. SPIE 8470, Thin Film Solar Technology IV, 84700M (10 October 2012); doi: 10.1117/12.929712
Show Author Affiliations
Yu-Ting Hsu, National Chiao Tung Univ. (Taiwan)
Kai-Feng Huang, National Chiao Tung Univ. (Taiwan)
Shang-I Tsai, National Univ. of Kaohsiung (Taiwan)
Wen-Hou Lan, National Univ. of Kaohsiung (Taiwan)
Ming Yueh, National Cheng Kung Univ. (Taiwan)
Jia-Ching Lin, Chung-Shan Institute of Science and Technology (Taiwan)
Kuo-Jen Chang, Chung-Shan Institute of Science and Technology (Taiwan)
Wen-Jen Lin, Chung-Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 8470:
Thin Film Solar Technology IV
Louay A. Eldada, Editor(s)

© SPIE. Terms of Use
Back to Top