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Proceedings Paper

The mechanism of charge generation in charge generation units containing HATCN for high-luminance tandem OLED display
Author(s): Sunghun Lee; Jeong-Hwan Lee; Jae-Hyun Lee; Jang-Joo Kim
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Paper Abstract

We report the rate limiting step of charge generation in the charge generation units (CGUs) composed of a p-HTL, HATCN and n-doped electron transporting layer (n-ETL) where TAPC was used as the HTL. Energy level alignment determined by the capacitance-voltage (C-V) measurements and the current density-voltage characteristics of the structure clearly showed that the electron injection at the HATCN/n-ETL junction limits the charge generation in the CGUs rather than charge generation itself at the p-HTL/HATCN junction. Consequently, the CGUs with 30 mol% Rb2CO3 doped BPhen formed with the HATCN layer generates charges very efficiently and the excess voltage required to generate the current density of ±10 mA/cm2 was around 0.17 V, which is extremely small compared with the literature values reported up to now.

Paper Details

Date Published: 13 September 2012
PDF: 5 pages
Proc. SPIE 8476, Organic Light Emitting Materials and Devices XVI, 84761N (13 September 2012); doi: 10.1117/12.929559
Show Author Affiliations
Sunghun Lee, Seoul National Univ. (Korea, Republic of)
Jeong-Hwan Lee, Seoul National Univ. (Korea, Republic of)
Jae-Hyun Lee, Seoul National Univ. (Korea, Republic of)
Jang-Joo Kim, Seoul National Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8476:
Organic Light Emitting Materials and Devices XVI
Franky So; Chihaya Adachi, Editor(s)

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