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Proceedings Paper

Planar light source by using side-emitting of GaN die with top and bottom reflector
Author(s): Chi-Shou Wu; Cheng-Chien Chen; Ming-Siou Tsai; Tsung-Xian Lee; Ching-Cherng Sun
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Paper Abstract

Based on Monte Carlo ray tracing we present a study of GaN die with a reflective layer coated on a p-GaN surface inside the light guide as a planar light source. We simulated the lights extracted from the GaN die implanting pyramid microstructure on the top surface of sapphire or on the top surface of p-GaN. Micro pyramid array with different slanted angle from 50 to 850 is shown to effectively improve the light extraction efficiency. In addition, the pattern sapphire substrate with slanted angle of ten degrees is found to be an effective way to increase the lateral directionality than the surface texture.

Paper Details

Date Published: 11 October 2012
PDF: 6 pages
Proc. SPIE 8486, Current Developments in Lens Design and Optical Engineering XIII, 84860U (11 October 2012); doi: 10.1117/12.929531
Show Author Affiliations
Chi-Shou Wu, National Central Univ. (Taiwan)
Cheng-Chien Chen, National Central Univ. (Taiwan)
Ming-Siou Tsai, National Central Univ. (Taiwan)
Tsung-Xian Lee, National Taiwan Univ. of Science and Technology (Taiwan)
Ching-Cherng Sun, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 8486:
Current Developments in Lens Design and Optical Engineering XIII
R. Barry Johnson; Virendra N. Mahajan; Simon Thibault, Editor(s)

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