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Proceedings Paper

Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides
Author(s): Ji Hoon Kim; Sung-Min Hwang; Yong Gon Seo; Doo Soo Kim; Kwang Hyeon Baik; Jung Ho Park
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Paper Abstract

We investigated the effects of SiNx interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal–organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiNx layer could strongly affect the a-plane GaN surface morphology due to the different SiNx coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiNx coverage and multiple SiNx-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiNx interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers.

Paper Details

Date Published: 15 October 2012
PDF: 7 pages
Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 84840H (15 October 2012); doi: 10.1117/12.929523
Show Author Affiliations
Ji Hoon Kim, Korea Univ. (Korea, Republic of)
Sung-Min Hwang, Korea Electronics Technology Institute (Korea, Republic of)
Yong Gon Seo, Korea Electronics Technology Institute (Korea, Republic of)
Doo Soo Kim, Korea Electronics Technology Institute (Korea, Republic of)
Kwang Hyeon Baik, Hongik Univ. (Korea, Republic of)
Jung Ho Park, Korea Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8484:
Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang; Ian T. Ferguson, Editor(s)

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