Share Email Print
cover

Proceedings Paper

InGaAs bow-tie diodes for terahertz imaging: low frequency noise characterisation
Author(s): Linas Minkevičius; Mantas Ragauskas; Jonas Matukas; Vilius Palenskis; Sandra Pralgauskaite; Dalius Seliuta; Irmantas Kašalynas; Gintaras Valušis
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Noise characteristics of bow-tie InGaAs diodes in forward and backward directions were measured in frequency range from 10 Hz to 20 kHz at room temperature. It was found that the spectral density of voltage fluctuations changes with frequency approximately as 1/f, indicating that origin of noise is superposition of generation and recombination processes in defects of the structure. It was determined that the dependence of spectral density of current fluctuation on current in backward and forward directions at different frequencies exhibits asymmetry which reflects non-uniform electric field distribution within the structure. As both noise and sensitivity increase with bias current, optimal conditions for device operation are discussed.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 849612 (15 October 2012); doi: 10.1117/12.929501
Show Author Affiliations
Linas Minkevičius, Ctr. for Physical Sciences and Technology (Lithuania)
Mantas Ragauskas, Ctr. for Physical Sciences and Technology (Lithuania)
Vilnius Univ. (Lithuania)
Jonas Matukas, Vilnius Univ. (Lithuania)
Vilius Palenskis, Vilnius Univ. (Lithuania)
Sandra Pralgauskaite, Vilnius Univ. (Lithuania)
Dalius Seliuta, Ctr. for Physical Sciences and Technology (Lithuania)
Irmantas Kašalynas, Ctr. for Physical Sciences and Technology (Lithuania)
Gintaras Valušis, Ctr. for Physical Sciences and Technology (Lithuania)


Published in SPIE Proceedings Vol. 8496:
Terahertz Emitters, Receivers, and Applications III
Manijeh Razeghi; Alexei N. Baranov; Henry O. Everitt; John M. Zavada; Tariq Manzur, Editor(s)

© SPIE. Terms of Use
Back to Top