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Proceedings Paper

Formation of silicon nanoparticles from high temperature annealed silicon rich silicon oxynitride films
Author(s): Abdelilah Slaoui; Fabien Ehrhardt; Florian Delachat; Gérald Ferblantier; Dominique Muller
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Paper Abstract

Silicon rich silicon oxynitride layers were deposited by ECR-PECVD in order to form silicon nanoparticles upon high thermal annealing at 1100°C. The effect of the gas precursor type and flows on the atomic composition and the structural properties was assessed by RBS and ERDA analysis as well as by Raman spectroscopy. The morphological and crystalline properties of the resulting nanoparticles were investigated by TEM analysis. We have found that the silicon nanoparticules average size and the crystalline fraction depend strongly on the silicon excess in the SiN and SiON layer.

Paper Details

Date Published: 31 October 2012
PDF: 8 pages
Proc. SPIE 8471, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III, 84710B (31 October 2012); doi: 10.1117/12.929261
Show Author Affiliations
Abdelilah Slaoui, Institut d'Électronique du Solide et des Systèmes, CNRS (France)
Fabien Ehrhardt, Institut d'Électronique du Solide et des Systèmes, CNRS (France)
Florian Delachat, Institut d'Électronique du Solide et des Systèmes, CNRS (France)
Gérald Ferblantier, Institut d'Électronique du Solide et des Systèmes, CNRS (France)
Dominique Muller, Institut d'Électronique du Solide et des Systèmes, CNRS (France)


Published in SPIE Proceedings Vol. 8471:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III
Loucas Tsakalakos, Editor(s)

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