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Proceedings Paper

Optical spin injection and spin lifetime in Ge heterostructures
Author(s): Fabio Pezzoli; Federico Bottegoni; Dhara Trivedi; Franco Ciccacci; Anna Giorgioni; Pengki Li; Stefano Cecchi; Emanuele Grilli; Yang Song; Mario Guzzi; Hanan Dery; Giovanni Isella
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Paper Abstract

We studied spin properties of Ge heterostructures by optical orientation and Hanle measurements. The circular polarization of the direct gap photoluminescence is shown to exceed the theoretical bulk limit, yielding about 37% and 85% for transitions with heavy and light holes, respectively. The energetic proximity of Γ and L valleys and ultrafast scattering of electrons from Γ to L states allowed us to resolve the spin dynamics of holes and to observe the polarization of electrons after scattering to L valleys. The spin relaxation analysis indicates that the spin lifetime of electrons exceeds 5 ns below 150 K, whereas it is in the 500 ps range for holes.

Paper Details

Date Published: 9 October 2012
PDF: 11 pages
Proc. SPIE 8461, Spintronics V, 84610P (9 October 2012); doi: 10.1117/12.929204
Show Author Affiliations
Fabio Pezzoli, Univ. degli Studi di Milano-Bicocca (Italy)
Federico Bottegoni, Politecnico di Milano (Italy)
Dhara Trivedi, Univ. of Rochester (United States)
Franco Ciccacci, Politecnico di Milano (Italy)
Anna Giorgioni, Univ. degli Studi di Milano-Bicocca (Italy)
Pengki Li, Univ. of Rochester (United States)
Stefano Cecchi, Politecnico di Milano (Italy)
Emanuele Grilli, Univ. degli Studi di Milano-Bicocca (Italy)
Yang Song, Univ. of Rochester (United States)
Mario Guzzi, Univ. degli Studi di Milano-Bicocca (Italy)
Hanan Dery, Univ. of Rochester (United States)
Giovanni Isella, Politecnico di Milano (Italy)


Published in SPIE Proceedings Vol. 8461:
Spintronics V
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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