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Proceedings Paper

Variable range hopping conduction in insulating n-type InSb semiconductor
Author(s): Abdelghani Sybous; Abdelhamid El Kaaouachi; Said Dlimi; Abdelfattah Narjis; Lhoussine Limouny; Bruno Capoen; Gerard Biskupski
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Paper Abstract

Longitudinal and positive magnetoresistance behaviour was used to determine what of the Variable Range Hopping (VRH) conduction regime is found in insulating InSb sample, Mott VRH regime or Efros- Shklovskii (ES) VRH regime. Experimental results are reported on field longitudinal magnetoresistance in insulating n-type InSb sample in which range hopping occurs at low temperatures. Positive magnetoresistance associated with VRH conduction has been observed. Experimental data are tentatively compared with available theoretical models in the insulating regime.

Paper Details

Date Published: 27 September 2012
PDF: 8 pages
Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590Z (27 September 2012); doi: 10.1117/12.929132
Show Author Affiliations
Abdelghani Sybous, Univ. Ibn Zohr (Morocco)
Abdelhamid El Kaaouachi, Univ. Ibn Zohr (Morocco)
Said Dlimi, Univ. Ibn Zohr (Morocco)
Abdelfattah Narjis, Univ. Ibn Zohr (Morocco)
Lhoussine Limouny, Univ. Ibn Zohr (Morocco)
Bruno Capoen, CERLA, CNRS, Univ. des Sciences et Technique de Lille I (France)
Gerard Biskupski, Lab. de Spectroscopie Hertzienne, CNRS, Univ. des Sciences et Technique de Lille I (France)


Published in SPIE Proceedings Vol. 8459:
Physical Chemistry of Interfaces and Nanomaterials XI
Jenny Clark; Carlos Silva, Editor(s)

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