Share Email Print
cover

Proceedings Paper

Semiconductor investigation by terahertz radiation pulses
Author(s): Arūnas Krotkus; A. Arlauskas; R. Adomavičius
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Several applications of terahertz radiation pulses for characterizing semiconductor bulk materials and structures are described. Terahertz pulses emitted at the surfaces illuminated by femtosecond laser of a tunable wavelength are demonstrated to provide information on the electron energy spectrum in the conduction band as well as on the subsurface band bending. On the other hand, by sampling the conductivity of various structures with short electrical field transient photoexcited electron dynamics can be directly studied at its initial, subpicosecond time scale. Narrow gap semiconductors InSb and InAs as well as novel materials such as GaAsBi or self-assembled InAs quantum dots were characterized by using terahertz radiation pulses.

Paper Details

Date Published: 15 October 2012
PDF: 10 pages
Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 84960V (15 October 2012); doi: 10.1117/12.929130
Show Author Affiliations
Arūnas Krotkus, Ctr. for Physical Sciences and Technology (Lithuania)
A. Arlauskas, Ctr. for Physical Sciences and Technology (Lithuania)
R. Adomavičius, Ctr. for Physical Sciences and Technology (Lithuania)


Published in SPIE Proceedings Vol. 8496:
Terahertz Emitters, Receivers, and Applications III
Manijeh Razeghi; Alexei N. Baranov; Henry O. Everitt; John M. Zavada; Tariq Manzur, Editor(s)

© SPIE. Terms of Use
Back to Top