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Proceedings Paper

Properties of the thin-film solar cells with heterojunctions Cu2S-Cd1-xZnxS and Cu2Se-Cd1-xZnxSe
Author(s): M. A. Jafarov; E. F. Nasirov
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Paper Abstract

In recent years, resumed intensive studies of heterojunctions, in connection with the possibility of using them on the most economical and relatively efficient photodetectors. In this economy is determined by the structure of production technology and the value of the source material. Thus there is a substitution reaction on the surface of the films Cd1-xZnxS formed a second layer of Cu2S, whose thickness is determined by the time of deposition. When light 1,45⋅104 lux photocells studied Cu2S-Cd1-xZnxS and Cu2Se-Cd1-xZnxSe generated voltage 0,5÷0,6V and in 0,45-0,58V, current Jsc 15 ÷ 20 mA/sm2 and 12-15mA/cm2 and efficiency were = 11%. and 8%. respectively. It is established that with increasing content of Zn in the base material-circuit voltage Uos photocell increases and short-circuit current decreases. Using as a base material of solid solutions of Cd1-xZnxS and Cd1-xZnxSe causes an increase in the potential barrier at the contact.

Paper Details

Date Published: 10 October 2012
PDF: 5 pages
Proc. SPIE 8470, Thin Film Solar Technology IV, 84700I (10 October 2012); doi: 10.1117/12.929100
Show Author Affiliations
M. A. Jafarov, Baku State Univ. (Azerbaijan)
E. F. Nasirov, Baku State Univ. (Azerbaijan)

Published in SPIE Proceedings Vol. 8470:
Thin Film Solar Technology IV
Louay A. Eldada, Editor(s)

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