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Proceedings Paper

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition
Author(s): Lin Li; Chi-Jing Hong-Liao; Yi Zhe Huang; Cheng Chen; Shude Yao; Zi Rong Qiu; H. H. Lin; Ian T. Ferguson; Zhe Chuan Feng
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Paper Abstract

Quaternary III-V compound InAlGaP, especially In0.5(AlxGa1-x)0.5P which is lattice matched with GaAs, are important materials for visible red-green light emitting diode (LED) and laser diode (LD), solar cell and other optoelectronic and electronic device applications. A set of In0.5(AlxGa1-x)0.5P thin films on GaAs substrates with a wide range of x up to ~80%, were grown by low pressure metalorganic chemical vapor deposition (MOCVD) and studied by a variety of nuclear science and optical analytical techniques, including Rutherford Backscattering Spectrometry (RBS), Raman scattering, photoluminescence (PL), Photoreflectance (PR) and FTIR. Temperature dependent PL-PR measurements over 10-300 K presented the band gap of these InAlGaP materials and variations with composition x and temperature (T). RBS was used to measure the microstructure of AlInGaP films, and through simulation, determine the film thickness and composition precisely. RBS measurement and simulation results indicate a quite fuzzy in the two interfaces, i.e. that there exists diffusion in the majority samples, especially between the AlInGaP layer and substrate. For a certain number of incoming He+ ions,we have proposed a way to determine the error bar by RBS successful. For this series of samples, the error bar of content is around ±1.5%. The error bar of thickness is around ±5.0nm. Different InAlGaP films with different composition and thickness may present different error bars. The results illuminate that RBS is a precise tool to analysis the microstructure of quaternary semiconductor AlInGaP/GaAs samples.

Paper Details

Date Published: 15 October 2012
PDF: 10 pages
Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 84840Y (15 October 2012); doi: 10.1117/12.928862
Show Author Affiliations
Lin Li, Peking Univ. (China)
Chi-Jing Hong-Liao, National Taiwan Univ. (Taiwan)
Yi Zhe Huang, National Taiwan Univ. (Taiwan)
Cheng Chen, Sun Yat-Sen Univ. (China)
Shude Yao, Peking Univ. (China)
Zi Rong Qiu, Sun Yat-Sen Univ. (China)
H. H. Lin, National Taiwan Univ (Taiwan)
Ian T. Ferguson, The Univ. of North Carolina at Charlotte (United States)
Zhe Chuan Feng, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 8484:
Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting
Matthew H. Kane; Christian Wetzel; Jian-Jang Huang; Ian T. Ferguson, Editor(s)

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