Share Email Print

Proceedings Paper

High-sensitivity submillimeter wave detector module implementing InP-based zero-biased Schottky-barrier diode
Author(s): Hiroshi Ito; Yoshifumi Muramoto; Hiroshi Yamamoto; Tadao Ishibashi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A sub-millimeter(mm)-wave detector module implementing an InP-based zero-biased Schottky-barrier diode (SBD) has been fabricated. The SBD is monolithically integrated with a short-stub resonant matching circuit for increasing the detection sensitivity as well as providing a biasing circuit. The SBD chip is mounted in a compact J-band (WR-3) rectangular-waveguide-input module for practical use. The module exhibits a peak sensitivity at around 350 GHz due to the characteristics of the matching circuit, and a good linearity of the output voltage against the input sub-mm-wave power. A record sensitivity of 1460 V/W is obtained for the InP-based zero-biased SBD at 350 GHz.

Paper Details

Date Published: 15 October 2012
PDF: 8 pages
Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 84960K (15 October 2012); doi: 10.1117/12.928702
Show Author Affiliations
Hiroshi Ito, Kitasato Univ. (Japan)
Yoshifumi Muramoto, NTT Photonics Labs. (Japan)
Hiroshi Yamamoto, Kitasato Univ. (Japan)
Tadao Ishibashi, NTT Electronics Corp. (Japan)

Published in SPIE Proceedings Vol. 8496:
Terahertz Emitters, Receivers, and Applications III
Manijeh Razeghi; Alexei N. Baranov; Henry O. Everitt; John M. Zavada; Tariq Manzur, Editor(s)

© SPIE. Terms of Use
Back to Top