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Proceedings Paper

Terahertz narrow-band tune amplification effect in triple-barrier quantum well resonant tunneling nanostructures
Author(s): V. V. Kapaev; V. N. Murzin; S. A. Savinov
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Paper Abstract

Resonant tunneling diode high-frequency study on the base of proposed quantum models and numerical solution of timedependent Schrödinger equation with open-system boundary conditions in external electromagnetic field are performed for single-quantum well and double-quantum well resonant tunneling structures. As shown the presence of privileged additional level in double-quantum well structures breaks response symmetry, leads to narrow-band frequency selective amplification at frequencies equal to energy spacing between levels in neighbouring quantum wells and to selection of portion of emitter electrons that actively interact with external THz electromagnetic field. The phenomenon results in essentially increase of gain coefficient and opens the possibility of narrow-band amplification frequency tuning in TBRTS in THz range by variation of applied bias voltage.

Paper Details

Date Published: 15 October 2012
PDF: 15 pages
Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 84960B (15 October 2012); doi: 10.1117/12.928582
Show Author Affiliations
V. V. Kapaev, P.N. Lebedev Physical Institute (Russian Federation)
V. N. Murzin, P.N. Lebedev Physical Institute (Russian Federation)
S. A. Savinov, P.N. Lebedev Physical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 8496:
Terahertz Emitters, Receivers, and Applications III
Manijeh Razeghi; Alexei N. Baranov; Henry O. Everitt; John M. Zavada; Tariq Manzur, Editor(s)

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