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Proceedings Paper

Analysis on carrier energy relaxation in superlattices and its implications on the design of hot carrier solar cell absorbers
Author(s): Y. Feng; P. Aliberti; R. J. Patterson; B. P. Veettil; S. Lin; H. Xia; S. Shrestha; M. A. Green; G. J. Conibeer
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Paper Abstract

Hot carrier solar cell (HCSC) requires a slow cooling rate of carriers in the absorber, which can potentially be fullled by semiconductor superlattices. In this paper the energy relaxation time of electrons in InN InxGa1-xN superlattices are computed with Monte Carlo simulations considering the multi-stage energy loss of electrons. As a result the effect of each stage in the relaxation process is revealed for superlattice absorbers. The energy relaxation rate figures are obtained for different material systems of the absorber, i.e. for different combinations of Indium compositions and the thicknesses of well and barrier layers in the superlattices. The optimum material system for the absorber has been suggested, with the potential to realize HCSCs with high efficiency.

Paper Details

Date Published: 15 October 2012
PDF: 11 pages
Proc. SPIE 8471, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III, 847103 (15 October 2012); doi: 10.1117/12.928459
Show Author Affiliations
Y. Feng, The Univ. of New South Wales (Australia)
P. Aliberti, The Univ. of New South Wales (Australia)
R. J. Patterson, The Univ. of New South Wales (Australia)
B. P. Veettil, The Univ. of New South Wales (Australia)
S. Lin, The Univ. of New South Wales (Australia)
H. Xia, The Univ. of New South Wales (Australia)
S. Shrestha, The Univ. of New South Wales (Australia)
M. A. Green, The Univ. of New South Wales (Australia)
G. J. Conibeer, The Univ. of New South Wales (Australia)


Published in SPIE Proceedings Vol. 8471:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III
Loucas Tsakalakos, Editor(s)

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