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Proceedings Paper

Studies on transmittance of silicon with AR coating films for IR transparent window
Author(s): Myeongho Song; Eunmi Park; Moon Seop Hyun; Tae Hyun Kim; Hee Yeoun Kim; Gawon Lee
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Paper Abstract

We investigated silicon as a promising material for a IR transparent window platform of IR(Infrared Ray) sensors with WLP(wafer level package), because silicon has advantages in price and CMOS process compatibility compared to Ge window although Ge exhibits higher IR transmittance than Si. Having comparable transmittance to Ge is the key to use silicon as a IR transparent window platform. We compared several types of AR coating films, SiN, SiO2, only ZnS, and Ge/ZnS for finding the condition of maximizing transmittance of Si in the range of 8 ~12 um , LW-IR(Longwave IR). Also we investigated changing of transmittance for LW-IR after thermal treatments in several ambient gases and several temperatures.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120P (15 October 2012); doi: 10.1117/12.928346
Show Author Affiliations
Myeongho Song, Korea National NanoFab Ctr. (Korea, Republic of)
Chungnam National Univ. (Korea, Republic of)
Eunmi Park, Korea National NanoFab Ctr. (Korea, Republic of)
Moon Seop Hyun, Korea National NanoFab Ctr. (Korea, Republic of)
Tae Hyun Kim, Korea National NanoFab Ctr. (Korea, Republic of)
Hee Yeoun Kim, Korea National NanoFab Ctr. (Korea, Republic of)
Gawon Lee, Chungnam National Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8512:
Infrared Sensors, Devices, and Applications II
Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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