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Proceedings Paper

Characterization of thallium-based ternary semiconductor compounds for radiation detection
Author(s): Zhifu Liu; John A. Peters; Sandy Nguyen; Maria Sebastian; Bruce W. Wessels; Shichao Wang; Hosub Jin; Jino Im; Arthur J. Freeman; Mercouri G. Kanatzidis
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Paper Abstract

We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl3SbS3, Tl2SnS3, and Tl7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.

Paper Details

Date Published: 24 October 2012
PDF: 9 pages
Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 85070O (24 October 2012); doi: 10.1117/12.928325
Show Author Affiliations
Zhifu Liu, Northwestern Univ. (United States)
John A. Peters, Northwestern Univ. (United States)
Sandy Nguyen, Northwestern Univ. (United States)
Maria Sebastian, Northwestern Univ. (United States)
Bruce W. Wessels, Northwestern Univ. (United States)
Shichao Wang, Northwestern Univ. (United States)
Hosub Jin, Northwestern Univ. (United States)
Jino Im, Northwestern Univ. (United States)
Arthur J. Freeman, Northwestern Univ. (United States)
Mercouri G. Kanatzidis, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 8507:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Ralph B. James; Arnold Burger; Larry A. Franks; Michael Fiederle, Editor(s)

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