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Proceedings Paper

Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method
Author(s): Yadong Xu; Yihui He; Lingyan Xu; Tao Wang; Gangqiang Zha; Wanqi Jie
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Paper Abstract

We have developed the detached Bridgman process for growth of CdZnTe crystals. Detachment of the solidification interface from the growth ampoule results in a low density of dislocations in the grown material and large single crystal grains. The detached Bridgman process also provides for direct control of the melt composition close to the growth front, allowing for accurate control of both the density of the Te/Cd precipitates as well as the majority carrier concentration in the grown material. The influence of melt-composition control and compensation by shallow and deep donors on detector performance is presented.

Paper Details

Date Published: 24 October 2012
PDF: 6 pages
Proc. SPIE 8507, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV, 850710 (24 October 2012); doi: 10.1117/12.928176
Show Author Affiliations
Yadong Xu, Northwestern Polytechnical Univ. (China)
Yihui He, Northwestern Polytechnical Univ. (China)
Lingyan Xu, Northwestern Polytechnical Univ. (China)
Tao Wang, Northwestern Polytechnical Univ. (China)
Gangqiang Zha, Northwestern Polytechnical Univ. (China)
Wanqi Jie, Northwestern Polytechnical Univ. (China)


Published in SPIE Proceedings Vol. 8507:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Ralph B. James; Arnold Burger; Larry A. Franks; Michael Fiederle, Editor(s)

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