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Proceedings Paper

Sensitive detectors of terahertz radiation based on Pb1-xSnxTe(In)
Author(s): D. E. Dolzhenko; A. V. Nicorici; L. I. Ryabova; D. R. Khokhlov
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Paper Abstract

Doping of the lead telluride and related alloys with the group III impurities results in appearance of the unique physical features of a material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), high radiation hardness and many others. We present the physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, and others. We report on the performance of lead telluride-based single direct detectors. The optical NEP on the order of 10-19 W/Hz1/2 at T=1.57 K has been demonstrated at the wavelength of 350 m. The advantages of terahertz photodetecting systems based on the group III-doped IV-VI are summarized.

Paper Details

Date Published: 24 October 2012
PDF: 8 pages
Proc. SPIE 8511, Infrared Remote Sensing and Instrumentation XX, 85110H (24 October 2012); doi: 10.1117/12.928174
Show Author Affiliations
D. E. Dolzhenko, M.V. Lomonosov Moscow State Univ. (Russian Federation)
A. V. Nicorici, Institute of Applied Physics (Moldova)
L. I. Ryabova, M.V. Lomonosov Moscow State Univ. (Russian Federation)
D. R. Khokhlov, M.V. Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 8511:
Infrared Remote Sensing and Instrumentation XX
Marija Strojnik; Gonzalo Paez, Editor(s)

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