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Proceedings Paper

Effect of temperature conditions on the emission of ion-induced secondary electrons from MgO films
Author(s): Chandra Bhal Singh; Surajit Sarkar; Vandana Singh; Sanjay K. Ram; Satyendra Kumar
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Paper Abstract

We report that the vacuum annealing of MgO films at 225°C results in the removal of water based contamination and the secondary electron emission coefficient increases from 0.09 to 0.15. The effective secondary electron emission yield increases from 0.2 to 0.75 at 200 mbar chamber pressure, as temperature increases to 250 °C. The effective secondary electron emission yield at 200, 350 and 800 mbar pressure shows similar trend during the heating as well as cooling of the MgO sample. Thermionic emission, smaller surface band bending and the removal of impurities at high temperature are possible reasons for the increase in secondary electrons of MgO thin films.

Paper Details

Date Published: 15 October 2012
PDF: 6 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854935 (15 October 2012); doi: 10.1117/12.928033
Show Author Affiliations
Chandra Bhal Singh, Indian Institute of Technology Kanpur (India)
SSN Research Centre, SSN Nagar, Tamilnadu, India (India)
Surajit Sarkar, Indian Institute of Technology Kanpur, Kanpur (India)
Vandana Singh, Indian Institute of Technology Kanpur (India)
Sanjay K. Ram, Univ. of Aarhus (Denmark)
Satyendra Kumar, Indian Institute of Technology Kanpur, Kanpur (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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