Share Email Print
cover

Proceedings Paper

Effect of Si, Sc, Cr doping on the structural, optical and discharge characteristics of MgO thin films as protective layer for plasma display panels
Author(s): Chandra Bhal Singh; U. K. Barik; Surajit Sarkar; Vandana Singh; Sanjay K. Ram; Harish K. Dwivedi; Satyendra Kumar
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report the effect of Si, Cr, Sc doping in the crystalline structure, optical and discharge characteristics of MgO thin films. Silicon and multiple (Si, Cr, Sc) doped MgO thin films demonstrate higher secondary electron emission (SEE). Si doping with Cr and Sc doping in MgO films shows much higher SEE as compared to pure and only Si doped MgO films. The importance of optimum amount of Sc doping is seen in our study where SEE reduced with further increase in Sc doping. The structural attributes of MgO films are correlated to the observed changes in discharge characteristics in the context of varying amount of Si, Sc, and Cr doping.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492Y (15 October 2012); doi: 10.1117/12.928027
Show Author Affiliations
Chandra Bhal Singh, Indian Institute of Technology Kanpur (India)
SSN Research Centre, SSN Nagar, Tamilnadu, India (India)
U. K. Barik, Samtel Color Ltd. (India)
Surajit Sarkar, Indian Institute of Technology Kanpur, Kanpur (India)
Vandana Singh, Indian Institute of Technology Kanpur (India)
Sanjay K. Ram, Indian Institute of Technology Kanpur (India)
Harish K. Dwivedi, Samtel Color Ltd. (India)
Satyendra Kumar, Indian Institute of Technology Kanpur, Kanpur (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

© SPIE. Terms of Use
Back to Top