Share Email Print
cover

Proceedings Paper

Wurtzite InN nanodots on Si(100) by molecular beam epitaxy
Author(s): Thirumaleshwara N. Bhat; Mohana K. Rajpalke; Mahesh Kumar; Basanta Roul; S. B. Krupanidhi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Studies were carried on the growth behavior of InN nanodots by plasma assisted molecular beam epitaxy on bare Si(100) substrates and their structural, optical, electrical properties. The growth was carried out by two different methods such as, (i) mono-step growth process at a low temperature and a (ii) bi-step growth process with the combination of low and high temperatures for the formation of single crystalline nanodots with well defined crystallographic facets due to cluster migration. Low temperature photoluminescence shows a free excitonic (FE) luminescence at 0.80 eV. The Raman spectroscopy and X-ray diffraction studies reveal that the nanodots as well as the film were of wurtzite structure and strain free.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492G (15 October 2012); doi: 10.1117/12.927424
Show Author Affiliations
Thirumaleshwara N. Bhat, Indian Institute of Science, Bangalore (India)
Mohana K. Rajpalke, Indian Institute of Science, Bangalore (India)
Mahesh Kumar, Indian Institute of Science, Bangalore (India)
Bharat Electronics (India)
Basanta Roul, Indian Institute of Science, Bangalore (India)
Bharat Electronics (India)
S. B. Krupanidhi, Indian Institute of Science, Bangalore (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

© SPIE. Terms of Use
Back to Top