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Proceedings Paper

Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy
Author(s): Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Mahesh Kumar; Basanta Roul; S. B. Krupanidhi
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Paper Abstract

The growth of nonpolar a- plane (1 1 -2 0) orientation of the GaN epilayers were confirmed by high resolution x-ray diffraction studies. An in-plane orientation relationship was found to be [0 0 0 1] GaN || [-1 1 0 1] sapphire and [-1 1 0 0] GaN || [1 1 -2 0] sapphire. SEM image shows the reasonably smooth surface. The photoluminescence spectrum shows near band emission (NBE) at 3.439 eV. The room temperature I-V characteristics of Au/a-GaN schottky diode performed. The Schottky barrier height b) and the ideality factor (η) for the Au/a-GaN schottky diode found to be 0.50 eV and 2.01 respectively.

Paper Details

Date Published: 15 October 2012
PDF: 4 pages
Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492W (15 October 2012); doi: 10.1117/12.927418
Show Author Affiliations
Mohana K. Rajpalke, Indian Institute of Science (India)
Thirumaleshwara N. Bhat, Indian Institute of Science (India)
Mahesh Kumar, Indian Institute of Science (India)
Bharat Electronics (India)
Basanta Roul, Indian Institute of Science (India)
Bharat Electronics (India)
S. B. Krupanidhi, Indian Institute of Science (India)


Published in SPIE Proceedings Vol. 8549:
16th International Workshop on Physics of Semiconductor Devices
Monica Katiyar; B. Mazhari; Y N Mohapatra, Editor(s)

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